CREATING MOSFET NONLINEAR CAPACITANCE MODEL
Authors:
1.
Smolensk Branch of the National Research University «Moscow Power Engineering Institute»
(kafedra «Elektronika i mikroprocessornaya tehnika», docent)
Smolensk, Smolensk, Russian Federation
Smolensk, Smolensk, Russian Federation
2.
branch of National Research University “MPEI”
(Candidate of Technical Sciences, Assistant Professor; Assistant Professor of the Department of Electronics and Microprocessor Technology)
Smolensk, Smolensk, Russian Federation
Smolensk, Smolensk, Russian Federation
Type:
Сonference article
Published:
20.02.2020
Subject area:
UDK 62 Инженерное дело. Техника в целом. Транспорт
GRNTI 47.01 Общие вопросы электроники и радиотехники
BBK 302 Проектирование
GRNTI 47.01 Общие вопросы электроники и радиотехники
BBK 302 Проектирование
Language:
Russian
Keywords:
MOSFET, gate-drain capacitance, measuring RLC bridge, exponential function
Abstract (English):
The problems of model creating for nonlinear gate-drain capacitance of MOSFET are considered. A circuit is proposed for measuring this capacitance in the region of negative drain-gate voltages. The dependence of the gate-drain capacitance on voltage for the IRF540N transistor is constructed and an approximating function that can be used to create a model of a MOS-transistor is proposed.
The problems of model creating for nonlinear gate-drain capacitance of MOSFET are considered. A circuit is proposed for measuring this capacitance in the region of negative drain-gate voltages. The dependence of the gate-drain capacitance on voltage for the IRF540N transistor is constructed and an approximating function that can be used to create a model of a MOS-transistor is proposed.
Keywords:
MOSFET, gate-drain capacitance, measuring RLC bridge, exponential function
MOSFET, gate-drain capacitance, measuring RLC bridge, exponential function
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