CONTROL OF THE RATE OF RISE OF REVERSE VOLTAGE FOR SCHOTTKY DIODES TESTING
Authors:
1.
Bryanskiy gosudarstvennyy tehnicheskiy universitet
Type:
Сonference article
Published:
22.12.2018
Subject area:
UDK 62 Инженерное дело. Техника в целом. Транспорт
GRNTI 50.51 Автоматизация проектирования
BBK 302 Проектирование
TBK 5136 Системы автоматического проектирования
GRNTI 50.51 Автоматизация проектирования
BBK 302 Проектирование
TBK 5136 Системы автоматического проектирования
Language:
Russian
Keywords:
simulation, parameters, Schottky diodes, automated control
Abstract (English):
The possibility of programmed control of the rate of rise of reverse voltage with automated control of the parameters of Schottky diodes was confirmed using computer simulation.
The possibility of programmed control of the rate of rise of reverse voltage with automated control of the parameters of Schottky diodes was confirmed using computer simulation.
Keywords:
simulation, parameters, Schottky diodes, automated control
simulation, parameters, Schottky diodes, automated control
1. Cree SiC Power White Paper: The Characterization of dV/dt Capabilities of Cree SiC Schottky diodes using an Avalanche Transistor Pulser. Sep. 2015. https://www.wolfspeed.com/power/tools-and-support/white-papers
2. Bryuhno, N. Issledovanie stoykosti SiC-diodov Shottki ZAO «GRUPPA KREMNIY EL» k skorosti narastaniya obratnogo napryazheniya/ N. Bryuhno, V. Gromov, A. Demidov i dr. //Silovaya elektronika. - 2018. - №2. - S.10 - 13.
3. Van Brunt E., Wang G., Liu J. et al. Operation of 4H-SiC Schottky diodes at dV/dt values over 700 kV/μs. Proceedings of the 2016 28 th International Symposium on Power Semiconductor Devices and ICs (ISPSD). June 12 - 16, 2016, Prague, Czech Republic.
