employee
Bryansk, Bryansk, Russian Federation
Bryansk, Bryansk, Russian Federation
UDK 621.382 Электронные элементы, использующие свойства твердого тела. Полупроводниковая электроника
The results of device-technological modelling of static current-voltage characteristics (CVC), as well as the dependences of differential resistance and power dissipation for the structure of a silicon carbide Schottky diode in Synopsys Sentaurus TCAD are presented. As a result of the research and modelling, the design and technological parameters of the Schottky diode are selected, on the basis of which the current-voltage characteristics are obtained, comparable with the specified accuracy with the physical experiment (the anode current is not less than 100 A, the breakdown voltage is not less than 1400 V at a temperature of 77 K). Verifying the static characteristics of the Schottky diode obtained by the instrumental-technological modelling is carried out by comparing the results of a computational experiment with a physical study of the Cree C4D20120D diode for a temperature range from 300 K to 77 K. The novelty of the work lies in developing an instrument-technological model (ITM) of a semiconductor device that takes into consideration a crystal self-heating effect; obtaining results reflecting the characteristics of a semiconductor device in the normal and extreme temperature operating conditions; in obtaining dependences reflecting the change in differential resistance and power dissipation; in having the possibility to use the results of the developed ITM for the industrial implementation of the silicon carbide Schottky diode at Russian enterprises in the form of discrete semiconductor devices, or elements as part of semiconductor power modules.
Schottky diode, liquid nitrogen, instrument-technological model, TCAD, static characteristics, constructive-technological solution, silicon carbide
1. Rybalka S.B., Demidov A.A., Malakhanov A.A. Power Diodes and Transistors on the Base of Silicon Carbide. Beau Bassin: LAP LAMBERT Academic Publishing; 2018.
2. Baliga, B.J. Fundamentals of Power Semiconductor Devices. Cham: Springer International Publishing, 2019.
3. Ivanov P.A. Experimental Junction Barrier Schottky (JBS) Diodes Based on 4H-SiC. Semiconductors. 2009;43(9):1249-1252.
4. Luo, X. Design and fabrication of high voltage 4H-SiC Schottky barrier diodes. 2019.
5. Belly N.A. Study of resistance of the ZAO «Gruppa Kremny EL» SiC Schottky Diode to the Speed of Increase of the Reverse Voltage. Power Electronics. 2018;2:71.
6. Dubensky G.A. Matters Concerned with Using Cryogenic Cooling of Static Converter Semiconductor Switches. Elektrichestvo. 2019;6:4-12.
7. A Cryogenically Cooled MW Inverter for Electrified Aircraft Propulsion / R. Chen [et al.] // AIAA Propulsion and Energy 2020 Forum AIAA Propulsion and Energy 2020 Forum. VIRTUAL EVENT: American Institute of Aeronautics and Astronautics. 2020.
8. Improving Performance of Cryogenic Power Electronics / P. Haldar [et al.] // IEEE Transactions on Appiled Superconductivity. 2005. Vol. 15. № 2. P. 2370-2375.
9. Kshirsagar P. Superconducting Motor and Cryo-Cooled Inverter Engine: SOARING. P. 12.
10. Superconducting motors for aircraft propulsion: the Advanced Superconducting Motor Experimental Demonstrator project / F. Grilli et. al. // Journal of Physics: Conference Series. 2020. T. 1590. - Superconducting motors for aircraft propulsion. P. 012051.
11. Medvedev DM Malakhanov AA. Modelling of the Current-Voltage Characteristics of LDD MOS Transistor at Cryogenic Temperature. In: Proceedings of the IVth International Scientific and Practical Conference; 2020; Bryansk: Bryansk State Technical University: 2020. p. 390-393. doi:https://doi.org/10.51932/9785907271739_390.
12. Boll D.M. 10 MW HTS Generator für hybrid-elektrische Flugzeugantriebe. 2020. P. 29.
13. Chuprina N.V. Modelling of an AC Electric Drive with Space-Vector Modulation Algorithms. Automation and Modelling in Design and Management. 2022;1(15):80-88.
14. European Commission. Directorate General for Research and Innovation. Flightpath 2050: Europe’s vision for aviation: maintaining global leadership and serving society’s needs. Flightpath 2050 / European Commission. Directorate General for Research and Innovation., European Commission. Directorate General for Mobility and Transport. - LU: Publications Office. 2011.
15. Ivanov P.A. High-Voltage (1800V) Planar 4H-SiC p-n Junctions with Floating Guard Rings. Semiconductors. 2009;43(4):527-530.
16. Ivanov P.A. High-Voltage (3.3 kV) 4H-SiC JBS Diodes. Semiconductors. 2011;45(5):677-681.
17. TCAD - Technology Computer Aided Design (TCAD) | Synopsys [Electronic resource]. - Access mode: https://www.synopsys.com/silicon/tcad .html (accessed: 04.04.2022).
